The core concept of this proposal is the development of a novel nano-manufacturing technology based on laser transfer techniques, which will enable the rapid, intact transfer and engineering of 2D stacks and heterostructures for optoelectronic, photonic and organic electronic devices. To achieve this, we will benefit from the unique advantages of the Laser Induced Backward Transfer (LIBT) and Laser Induced Forward Transfer (LIFT) techniques, which among other attributes, offer the capability for intact transfer of any 2D LM with high lateral resolution (micron scale), the transfer of 2D heterostructures and compatibility with a variety of substrates, including Si and flexible substrates.

The implementation of the proposed technology will offer a chemical -land defect-free transfer of 2D monolayers with high precision: exquisitely clean Si-2D semiconductor (SC) heterostructures will be demonstrated using LDT and enable the fabrication of NearIR Si emitters.

 

 

Single layer and defet free Graphene pixels will beprinted on flexible substrates for highly sensitive ultra-thin sensors. These breakthroughs in the fields of Si emitters and flexible touch sensors will validate the importance of LEAF-2D and facilitate the incorporation of 2D materials in a plethora of emerging technological fields.

© 2020 Leaf2D

This project has received funding from the European Union’s Horizon 2020 research

and innovation programme under grant agreement No 801389.

----------------------

The content of this website reflects only the views of its authors.

The European Commission is not responsible for any use that may be made of the information it contains