Research.

Feb 2021

Testing New Pulse Stretcher

Sometimes working with laser pulses that are just femtoseconds in duration can make the job much harder! With very short laser pulses, all of the energy in the pulse is squeezed into a very short burst, this means that the peak power in the laser pulse can be very high... 

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Dec 2020

3D Printed Vacuum Chamber

 

Experiments during the first year of the LEAF-2D project showed that Laser Induced Backwards Transfer (LIBT) of 2D materials can be very difficult in an atmosphere of air. The 2D materials tend to break-up into fragments as they fly through the air before landing on the intended receiver surface...

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Jan 2020

New Laser System Up and Running

Researchers at the University of Southampton, Optoelectronics Research Centre have carried out the first experiments with their new laser system purchased for the LEAF-2D project. Prior to this, experiments had been conducted using an old Ti:Sapphire Chirped Pulse Amplifier system...

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Bi  Se       S   growth on Sapphire (BAR ILAN UNIVERSITY)
  2       (3-x)     x 

A material growth achieved by a chemical vapor deposition method of thin layer manufacturing.

The material Bi2Se(3-x)Sx created as big flat hexagonal shape. The substrate material is sapphire.

MoS   growth (BAR ILAN UNIVERSITY)

A material growth achieved by a chemical vapor deposition method of thin layer manufacturing. The material MoS2  created as a flat mono-layer triangle shape. The substrate material is silicon wafer. A Raman shift and photoluminescence characterization graphs are presented

Growth of high quality MoS2 for LIBT & L
MoS   growth (BAR ILAN UNIVERSITY)

A material growth achieved by a chemical vapor deposition method of thin layer manufacturing. The material MoS2 created as a flat mono-layer triangle shape. The substrate material is silicon wafer. A Raman shift  with two typical MoS2 peak and a scanning electron microscopy image are presented.

© 2020 Leaf2D

This project has received funding from the European Union’s Horizon 2020 research

and innovation programme under grant agreement No 801389.

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